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The BD239-S is an NPN silicon power transistor manufactured by Bourns Inc., housed in a TO-220 through-hole package. It features a maximum collector-emitter voltage of 45V and a continuous collector current rating of 2A. The device supports a maximum power dissipation of 2W at standard conditions, with a case temperature rating of 30W at 25°C. Designed for general-purpose switching applications, it is lead-free and RoHS compliant. The component operates as a discrete bipolar junction transistor suitable for various electronic systems requiring moderate power handling capabilities.
Verify the specific suffix 'S' against the manufacturer's official documentation to confirm compliance with current environmental directives such as RoHS. Ensure the ordering part number matches the exact electrical specifications required for the design. Cross-reference the datasheet revision date to confirm that performance parameters have not changed. Confirm the package type is TO-220 before integration into the PCB layout.
Select this component when a 45V NPN transistor with 2A current capacity is required for through-hole assembly. Consider the thermal management requirements given the 2W dissipation limit. Evaluate the need for complementary PNP devices if push-pull configurations are planned. Verify that the operating temperature range aligns with the application environment constraints.
The BD239-S belongs to the family of NPN silicon power transistors produced by Bourns Inc. This series is engineered for robust performance in power switching roles. The component is often paired with its PNP counterpart to form complete driver stages. It represents a standard solution for medium-power discrete semiconductor needs in industrial and consumer electronics.
Public confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's official cross-reference guide for compatible alternatives. Ensure any replacement matches the 45V, 2A, and TO-220 specifications.