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Product Detailed Parameters
- Description：TRANS NPN 60V 2A TO-220-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 200mA, 1A
- Current - Collector Cutoff (Max)：300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 1A, 4V
- Power - Max：30 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The onsemi BD239ATU is an NPN epitaxial silicon power transistor housed in a TO-220AB three-pin through-hole package. It features a collector-emitter voltage (VCEO) of 100 V and a continuous collector current (IC) rating of 2 A. The device supports a maximum power dissipation of 30 W at 25°C case temperature, with a minimum DC current gain (hFE) of 40. It operates up to a junction temperature of 150°C and serves as the complementary counterpart to the BD240A PNP transistor.
Feature Summary
- Designed for medium power linear and switching applications
- Utilizes planar technology with Base Island layout for high gain and low saturation voltage
- Provides a direct complementary pairing with the BD240A PNP transistor
Applications
- Linear amplifier circuits
- General-purpose switching applications
- Complementary output stages
Procurement Notes
Verify the specific suffix 'A' against the datasheet to confirm the 100 V collector-emitter voltage rating, as other variants like BD239TU may differ. Ensure the TO-220AB package matches thermal requirements. Confirm RoHS compliance status for the specific manufacturing lot before integration into final assemblies.
Selection Notes
Select this component when a 100 V NPN power transistor is required for linear or switching tasks. It is specifically chosen to pair with the BD240A PNP transistor for push-pull configurations. Consider the 2 A current limit and 30 W dissipation capability relative to the available heatsinking and ambient temperature conditions.
Part Context
This part belongs to the BD239/A/B/C series of NPN silicon power transistors manufactured by onsemi. These devices are engineered for robust performance in medium-power environments. The 'A' designation typically denotes specific voltage and gain binning within the family, distinguishing it from standard or higher-voltage variants.
Replacement Considerations
The BD240A is the official complementary PNP replacement for circuit symmetry. Cross-manufacturer equivalents such as Fairchild Semiconductor BD239A or generic BD239A parts may be used if electrical parameters align.
