ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS NPN 80V 2A TO-220-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 200mA, 1A
- Current - Collector Cutoff (Max)：300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 1A, 4V
- Power - Max：30 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
Download product information
Overview
The BD239BTU is an NPN epitaxial silicon power transistor manufactured by Fairchild Semiconductor. It is housed in a TO-220AB package with three pins and plastic/epoxy body material. The device supports a maximum collector current of 2 A and features a collector-emitter voltage rating of 80 V. It has a minimum DC current gain (hFE) of 15 and operates at a maximum junction temperature of 150 °C.
Feature Summary
- Designed for medium power linear and switching applications
- Complements the BD240B PNP transistor pair
- Utilizes planar technology with Base Island layout
Applications
- Linear amplifier circuits
- General purpose switching applications
- Power supply output stages
Procurement Notes
Verify the specific suffix 'BTU' against official Fairchild documentation to confirm lead-free status and RoHS compliance, as generic BD239B datasheets may list non-compliant variants. Ensure the manufacturer source is explicitly identified as Fairchild Semiconductor rather than other vendors using similar part numbers. Confirm the TO-220AB package type matches the physical requirements of the target assembly.
Selection Notes
Select this component when an NPN power transistor with an 80 V collector-emitter breakdown voltage is required. It serves as the complementary match to the BD240B PNP transistor. Consider the 2 A continuous collector current limit and the thermal dissipation capabilities inherent to the TO-220AB flange mount package for appropriate heat sinking design.
Part Context
The BD239 series comprises NPN silicon power transistors intended for medium power applications. The BD239B variant specifically offers an 80 V collector-emitter voltage rating. This series is designed to work in conjunction with the corresponding BD240B PNP transistors, providing matched performance characteristics for push-pull or complementary circuit configurations.
Replacement Considerations
The BD240B is the documented complementary PNP counterpart. Other manufacturers produce equivalent NPN transistors with 80 V VCEO and 2 A IC ratings in TO-220 packages, but direct substitution requires verifying pinout compatibility and hFE gain ranges.
