BD239C-S

Overview

The BD239C-S is an NPN silicon power transistor manufactured by Bourns Inc., housed in a TO-220 package. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 2 A. The device has a power dissipation capacity of 2 W at 25°C, derating linearly to 150°C case temperature. Key electrical characteristics include a DC current gain (hFE) range of 40 to 250 and a collector-emitter saturation voltage of 700 mV max at 2 A base current. The component supports a maximum operating junction temperature of +150°C.

Feature Summary

• NPN silicon epitaxial-base construction for reliable switching performance
• High collector current capability suitable for medium power applications
• Robust thermal design with linear derating specifications

Applications

• Medium power linear amplifier circuits
• General purpose switching applications
• Power supply output stages

Procurement Notes

Verify the specific manufacturer suffix when sourcing, as BD239C variants exist from multiple vendors including STMicroelectronics and onsemi. Confirm that the BD239C-S designation specifically refers to the Bourns Inc. product to ensure correct pinout and absolute maximum ratings alignment. Request official datasheets to validate hFE binning and thermal resistance parameters prior to final procurement decisions.

Selection Notes

Select this component for designs requiring a standard NPN power transistor with 100 V blocking capability and 2 A current handling. Ensure the application circuit provides adequate heat sinking to maintain case temperatures within the derating curve limits. Compare hFE requirements against the specified minimum of 40 to guarantee sufficient drive current availability for saturation mode operation in low-power control interfaces.

Part Context

This part belongs to the general-purpose bipolar junction transistor category, utilizing a plastic TO-220 encapsulation. It serves as a discrete semiconductor solution for power management tasks where moderate voltage and current levels are required. The device complements complementary PNP counterparts in push-pull configurations commonly found in audio and motor driver circuits.

Replacement Considerations

Direct substitutes may include BD239 or BD239A depending on gain binning requirements. Verify pin compatibility and thermal characteristics before cross-referencing with other manufacturers' equivalent parts such as those from STMicroelectronics or onsemi.