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Product Detailed Parameters
- Description：TRANS NPN 100V 2A TO-220
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 200mA, 1A
- Current - Collector Cutoff (Max)：300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 1A, 4V
- Power - Max：2 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The BD239C is an NPN silicon power transistor manufactured by STMicroelectronics using planar technology with a Base Island layout. It is housed in a TO-220-3 through-hole package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 100 V, a continuous collector current of 2 A, and a power dissipation rating of 2 W. The device features a low saturation voltage of 700 mV and a DC current gain (hFE) ranging from 40 to 40. It operates at temperatures up to +150°C.
Feature Summary
- Manufactured using planar technology with a Base Island layout for high gain performance.
- Designed for applications requiring very low saturation voltage coupled with exceptional high gain.
- Single NPN configuration suitable for power switching and amplification tasks.
Applications
- Power switching circuits
- Linear amplifier stages
- General-purpose bipolar transistor applications
Procurement Notes
Verify the specific ordering suffix and packaging type against the manufacturer's official datasheet before procurement. Confirm that the component meets required RoHS and REACH compliance standards for your region. Ensure the TO-220-3 package dimensions match your PCB footprint requirements. Check for any specific handling instructions related to the silicon planar technology used in this device.
Selection Notes
Select the BD239C when a single NPN power transistor with a 100 V collector-emitter voltage and 2 A continuous current capability is required. Consider this component for designs needing low saturation voltage to minimize power loss during conduction. The TO-220-3 package is appropriate for through-hole mounting where adequate heat sinking can be provided. Verify that the hFE range of 40 to 40 meets the base drive requirements of your specific circuit design.
Part Context
The BD239C belongs to the family of power bipolar PNP-NPN transistors offered by STMicroelectronics, which includes voltage ratings up to 500 V. It is the NPN counterpart to the BD240C PNP transistor. This series utilizes planar technology to deliver reliable performance in power electronics applications requiring robust switching characteristics and stable operation under varying thermal conditions.
Replacement Considerations
The BD240C is the confirmed PNP complement within the same product family. No other direct substitute part numbers are documented in the provided source material.
FAQ
What manufacturing technology is used for the BD239C?
The BD239C is manufactured using planar technology with a Base Island layout.
Is there a complementary PNP transistor in the same series?
Yes, the BD240C is the PNP type corresponding to the NPN BD239C.
What is the maximum operating temperature for this transistor?
The maximum operating temperature for the BD239C is +150°C.
