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The BD240A is a PNP epitaxial silicon power transistor manufactured by onsemi. It features a maximum collector current of 2 A and a collector-emitter voltage rating of -70 V DC. The device provides a collector-base voltage of -60 V DC and an emitter-base voltage of -5 V DC. It operates with a continuous power dissipation of 30 W at 25°C case temperature, reaching a junction temperature of 150°C. The component utilizes a TO-220 package for through-hole mounting.
Verify the specific part number suffix against official manufacturer documentation to confirm exact electrical characteristics and packaging details. Ensure compatibility with existing thermal design requirements before procurement. Confirm that the component meets all necessary regulatory standards for the intended application environment.
Select this component when a PNP power transistor with a 2 A continuous collector current and -70 V breakdown voltage is required. Consider the TO-220 package for applications needing effective heat dissipation via a heatsink. Evaluate the need for complementary NPN counterparts like the BD239A for push-pull configurations.
This component belongs to the BD240/A/B/C series of PNP epitaxial silicon transistors. The series offers varying voltage ratings across different suffixes while maintaining consistent current handling capabilities. These devices are engineered for general-purpose power applications requiring reliable switching and amplification performance.
BD240B
The maximum collector-emitter voltage (VCEO) for the BD240A is -70 V.
Yes, the datasheet specifies that the BD240A serves as the complementary counterpart to the BD239A.
The maximum continuous DC collector current (IC) is rated at 2 A.