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Product Detailed Parameters
- Description：TRANS PNP 80V 2A TO-220-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 200mA, 1A
- Current - Collector Cutoff (Max)：300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 1A, 4V
- Power - Max：30 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The BD240BTU is a high-power NPN silicon epitaxial planar transistor manufactured by onsemi. It is housed in a TO-220AB package designed for flange mounting. The device features a maximum collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) rating of 3 A. It includes an integrated heat sink tab to facilitate thermal management in power applications. The component is lead-free, halide-free, and RoHS compliant.
Feature Summary
- High current handling capability suitable for power switching applications
- Integrated thermal pad for efficient heat dissipation via flange mounting
- Epitaxial planar construction for robust performance
Applications
- General-purpose power amplification
- Switching regulator circuits
- Motor control interfaces
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout configuration and electrical tolerances. Ensure the procurement channel provides traceable documentation confirming RoHS compliance and lead-free status. Cross-reference the part number with the latest revision history to avoid obsolete stock or packaging variations that may affect assembly compatibility.
Selection Notes
Select this component when designing circuits requiring moderate power dissipation with a single NPN transistor. The TO-220AB package is appropriate for applications where board space allows for through-hole mounting and direct heatsink attachment. Consider the thermal resistance characteristics relative to the expected ambient temperature and duty cycle to ensure reliable operation within specified limits.
Part Context
This component belongs to the general-purpose bipolar junction transistor (BJT) family from onsemi. It serves as a discrete power device distinct from integrated driver ICs or MOSFETs. The BD240 series is engineered for linear and switching modes, offering a balance between gain and current capacity for industrial and consumer electronics power stages.
Replacement Considerations
Consult official substitution guides for equivalent NPN transistors with matching VCEO and IC ratings. Verify that alternative packages maintain compatible thermal and mechanical footprints if direct replacement is required without PCB redesign.
