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The BD241ATU is an NPN epitaxial planar silicon power transistor manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) of 3 A. The device utilizes a 'Base Island' layout to achieve high gain and low saturation voltage. It is housed in a TO-220AB flange mount package with three terminals. The component operates within a junction temperature range of -65°C to +150°C and has a total power dissipation rating of 65 W.
Verify the specific suffix 'TU' against the official onsemi datasheet to confirm pinout and thermal pad configuration. Ensure the procurement source provides valid RoHS compliance documentation. Confirm that the component is not obsolete or restricted for new designs, as older variants may have different availability statuses.
Select this component when an NPN power transistor with 80 V breakdown and 3 A current handling is required. The TO-220 package facilitates through-hole mounting and heatsinking. Consider the complementary PNP type BD242ATU for push-pull configurations requiring matched electrical characteristics.
This part belongs to the BD241/BD242 series of complementary silicon power transistors. These devices are designed for general-purpose switching and linear amplifier applications. The series is characterized by robust construction and reliable performance in medium-power circuits.
The BD241C is a compatible alternative within the same family offering similar electrical specifications. Verify pin compatibility and thermal resistance values before substitution.