BD241CTU

Overview

The BD241CTU is a complementary silicon power transistor manufactured by onsemi using planar technology with a 'Base Island' layout. It is an NPN device housed in a TO-220 package, rated for a maximum collector-emitter voltage of 80 V and a continuous collector current of 3 A. The design provides exceptional high gain performance coupled with very low saturation voltage.

Feature Summary

• Manufactured using planar technology with a 'Base Island' layout
• Provides exceptional high gain performance
• Features very low saturation voltage

Applications

• Power amplifier circuits
• Switching applications requiring high gain
• Complementary pairs with PNP types like BD242A and BD242C

Procurement Notes

Verify the specific suffix TU against official datasheets to confirm the exact packaging variant. Ensure compatibility with thermal management requirements for the TO-220 flange mount configuration. Cross-reference the manufacturer's latest documentation to confirm active status or obsolescence before finalizing procurement plans.

Selection Notes

Select this component when a high-gain NPN power transistor with low saturation voltage is required. Consider its complementary PNP counterpart, the BD242C, for push-pull configurations. Verify that the 80 V rating and 3 A current capacity meet the circuit's electrical demands.

Part Context

This part belongs to the family of complementary silicon power transistors from onsemi (formerly Fairchild). The series includes NPN types such as the BD241A and BD241C, paired with PNP types like the BD242A and BD242C. These devices are designed for general-purpose power switching and amplification tasks.

Replacement Considerations

Official substitutes include the BD241A and BD241C within the same complementary series. Verify pinout and thermal characteristics match the original design requirements before substitution.