BD241TU

Overview

The BD241TU is an NPN epitaxial planar silicon power transistor manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) of 3 A. The device utilizes a 'Base Island' layout to achieve high gain and low saturation voltage. It is housed in a TO-220AB package designed for through-hole mounting, with a maximum power dissipation capability of 65 W.

Feature Summary

• Manufactured using planar technology with a specialized Base Island layout
• Provides exceptional high gain performance combined with very low saturation voltage
• Designed for robust power switching applications requiring reliable thermal management

Applications

• General-purpose power amplification circuits
• Switching regulators and power supplies
• Audio output stages

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout compatibility and thermal characteristics. Ensure the procurement channel provides original manufacturer documentation to validate authenticity. Cross-reference the part number with the latest onsemi product change notices to confirm manufacturing status and availability constraints.

Selection Notes

Select this component when designing circuits requiring moderate power handling with an 80 V collector-emitter rating. The TO-220 package facilitates direct heatsinking for thermal management. Consider the complementary PNP type for push-pull configurations where matched performance characteristics are required.

Part Context

This device belongs to the BD24x series of complementary silicon power transistors. The series includes both NPN and PNP variants, such as the BD242C, which serves as the complementary partner. These components are engineered for general-purpose power applications, offering a balance of voltage rating, current capacity, and gain stability.

Replacement Considerations

The BD241A is a documented variant within the same family. Verify electrical parameter equivalence before substitution.