BD242B

Description：TRANS PNP 80V 3A TO-220
Series：-

SKU:492a0370077e Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 80V 3A TO-220
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：PNP
Current - Collector (Ic) (Max)：3:00 AM
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：1.2V @ 600mA, 3A
Current - Collector Cutoff (Max)：300µA
DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 1A, 4V
Power - Max：40 W
Frequency - Transition：3MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220
Grade：-
Qualification：-

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BD242B

Overview

The BD242B is a PNP silicon power transistor from the onsemi BD241C/D complementary series, housed in a TO-220AB package. It features an 80 V collector-emitter voltage rating and supports a continuous collector current of 3 A with a peak current of 5 A. The device offers a maximum power dissipation of 40 W at 25°C case temperature, with a thermal resistance junction-to-case of 3.125 °C/W. Designed for general-purpose amplifier and switching applications, it exhibits a high current gain-bandwidth product of 3.0 MHz.

Feature Summary

Complementary PNP silicon power transistor designed for use with NPN counterparts
High current gain-bandwidth product suitable for linear and switching circuits
Compact TO-220AB plastic package with flange mount capability
Lead-free construction compliant with RoHS standards

Applications

General purpose amplifier circuits
Power switching applications
Complementary push-pull output stages

Procurement Notes

Verify component authenticity through authorized onsemi channels or certified distributors. Confirm the specific ordering suffix matches required packaging configurations. Check for updated lifecycle status as this device may be discontinued. Ensure compliance with applicable environmental regulations and soldering guidelines provided in official mounting manuals.

Selection Notes

Select the BD242B when a PNP counterpart to the BD241C is required for complementary designs. Evaluate thermal management requirements against the 40 W dissipation limit and derating curves. Consider the 80 V breakdown voltage for appropriate circuit headroom. Verify pinout compatibility with existing TO-220 footprints before integration.

Part Context

Part of the BD241C/D family of complementary silicon plastic power transistors manufactured by onsemi. The BD242B serves as the PNP complement to the BD241C NPN transistor. Both devices share similar structural characteristics and are intended for matched performance in complementary amplifier and switching topologies.