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The BD242B-S is a PNP silicon power transistor manufactured by Bourns Inc., designed for general-purpose amplifier and switching applications. It features a maximum collector-emitter voltage (VCEO) of 80 V, a maximum DC collector current of 3 A, and a power dissipation rating of 40 W. The device operates within a temperature range of -65°C to +150°C and utilizes a TO-220-3 through-hole package.
Verify component authenticity against official Bourns documentation due to the obsolete status of this specific part number. Confirm that the TO-220-3 pinout matches the target design requirements before integration. Ensure that thermal management solutions are adequate for the specified 40 W power dissipation limit under actual operating conditions.
Select this component when a PNP silicon transistor with 3 A continuous current capability and 80 V breakdown voltage is required. The TO-220-3 package facilitates effective heat sinking for high-power applications. Consider the -65°C to +150°C operating range for environmental compatibility in industrial or automotive contexts.
The BD242B-S belongs to the family of bipolar junction transistors (BJTs) produced by Bourns Inc. Historically, similar devices were originally developed by Motorola for robust power handling. This specific variant represents a discontinued product line, requiring careful sourcing verification from authorized distributors or surplus suppliers.
Public confirmed substitute part numbers are not available in the provided source material.