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Product Detailed Parameters
- Description：TRANS PNP 80V 3A TO-220
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：3:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：1.2V @ 600mA, 3A
- Current - Collector Cutoff (Max)：300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 1A, 4V
- Power - Max：2 W
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The BD242B is a PNP silicon epitaxial-base power transistor manufactured by STMicroelectronics. It is housed in a TO-220 plastic package and serves as the complementary device to the BD241B NPN transistor. Designed for medium power linear and switching applications, it features a collector-emitter voltage of 80 V and a continuous collector current rating of 3 A. The component supports a total power dissipation of 40 W at a case temperature of 25°C.
Feature Summary
- Complementary PNP configuration paired with the BD241B NPN transistor
- Epitaxial-base silicon construction for robust performance
- Suitable for medium power linear and switching applications
Applications
- Medium power linear circuits
- Switching applications
Procurement Notes
Verify the manufacturer origin, as the BD242B part number has been produced by multiple vendors including Fairchild and Bourns. Confirm that the specific unit matches the STMicroelectronics datasheet specifications, particularly the 80 V collector-emitter voltage rating. Ensure the package type is the standard TO-220 plastic housing. Check for lead-free compliance if required by your assembly process.
Selection Notes
Select this component when a PNP power transistor is required to complement an NPN device in push-pull or differential amplifier stages. The BD242B provides a matched counterpart to the BD241B, ensuring consistent electrical characteristics across the pair. Consider the thermal resistance values and the need for adequate heatsinking to maintain operation within the specified junction temperature limits during high-power dissipation scenarios.
Part Context
The BD242B belongs to the BD241/BD242 series of complementary silicon power transistors from STMicroelectronics. This family includes variants with different voltage ratings (A, B, and C suffixes). The BD242B specifically offers an 80 V rating, positioning it between the lower-voltage BD242A and the higher-voltage BD242C within the product line.
Replacement Considerations
The BD242A and BD242C are direct complementary counterparts within the same STMicroelectronics series. Verify that the voltage ratings of these alternatives align with the circuit requirements before substitution.
