BD242C

Description：TRANS PNP 100V 3A TO-220
Series：-

SKU:e38de8aed897 Category: Single Bipolar Transistors Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANS PNP 100V 3A TO-220
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：PNP
Current - Collector (Ic) (Max)：3:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：1.2V @ 600mA, 3A
Current - Collector Cutoff (Max)：300µA
DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 1A, 4V
Power - Max：40 W
Frequency - Transition：3MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220
Grade：-
Qualification：-

Download product information

BD242C

Overview

The BD242C is a PNP epitaxial silicon power transistor manufactured by onsemi in the TO-220AB package. It features a collector-emitter voltage (VCEO) of 80 V and a continuous collector current rating of 3.0 A. The device supports a peak collector current of 5.0 A and offers a total device dissipation of 40 W at a case temperature of 25°C. Key electrical characteristics include a DC current gain (hFE) ranging from 10 to 40 at specific test conditions, a collector-emitter saturation voltage of 1.2 V max, and a current gain-bandwidth product of 3.0 MHz.

Feature Summary

High current gain-bandwidth product for efficient signal amplification
Compact TO-220AB plastic package with flange mount capability
Epoxy material meets UL94 V-0 flammability rating
Lead-free construction compliant with RoHS standards

Applications

General purpose amplifier circuits
Switching applications requiring medium power handling
Complementary pairing with BD241C NPN transistors

Procurement Notes

Verify component authenticity through official onsemi channels or authorized distributors. Confirm the presence of the 'G' suffix indicating lead-free packaging. Check for the discontinued status notice, as this device may no longer be recommended for new designs. Ensure thermal management solutions match the specified junction-to-case thermal resistance values provided in the datasheet.

Selection Notes

Select the BD242C when a PNP counterpart to the BD241C is required for complementary push-pull configurations. Evaluate the 80 V collector-emitter voltage limit against circuit requirements. Consider the 3.0 A continuous current rating and 40 W power dissipation capabilities relative to the intended load and thermal environment. Verify compatibility with the TO-220AB mounting style for mechanical integration.

Part Context

The BD242C belongs to the BD241/BD242 series of complementary silicon plastic power transistors. It serves as the PNP complement to the BD241C NPN transistor. Both devices share similar structural layouts and are designed for general-purpose linear and switching applications. The series utilizes planar technology with a base island layout to achieve high gain performance.