BD242CTU

Overview

The BD242CTU is a PNP epitaxial silicon power transistor manufactured by onsemi. It is housed in a TO-220AB through-hole package designed for high-power applications. Key electrical ratings include a maximum collector-emitter voltage of 100 V and a continuous collector current of 3 A. The device features a maximum DC current gain (hFE) of 25 and supports a junction temperature up to 150°C with a power dissipation capacity of 25 W at 25°C case temperature.

Feature Summary

• PNP polarity configuration suitable for complementary switching circuits
• Epitaxial silicon construction for robust thermal performance
• TO-220AB flange mount package for efficient heat sinking

Applications

• Linear regulation circuits
• Power switching applications
• Complementary pairs with NPN counterparts

Procurement Notes

Verify the specific suffix 'CTU' against the official onsemi datasheet to confirm pinout orientation and mechanical dimensions, as variations exist within the BD242 family. Confirm RoHS compliance status directly from the manufacturer's documentation prior to procurement. Ensure the supplier provides valid traceability for this discontinued or legacy component series.

Selection Notes

Select the BD242CTU when a PNP transistor with 100 V breakdown and 3 A current capability is required in a TO-220 package. Compare its hFE minimum of 25 against circuit requirements for base drive current. Verify that the thermal resistance characteristics meet the system's heat dissipation needs without excessive heatsinking.

Part Context

This component belongs to the BD242 series of medium-power transistors. It serves as the PNP complement to the BD241 series. The family is engineered for linear and switching applications requiring reliable performance in audio amplifiers and power supplies.

Replacement Considerations

Publicly confirmed substitutes include the BD242C and BD242B. Verify pin compatibility and exact voltage ratings before substitution.