ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PNP 45V 3A TO-220-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：3:00 AM
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：1.2V @ 600mA, 3A
- Current - Collector Cutoff (Max)：300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 1A, 4V
- Power - Max：40 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
Download product information
Overview
The BD242TU is a PNP silicon power transistor manufactured by onsemi in the BD242C series. It utilizes planar technology with a Base Island layout to achieve high gain and low saturation voltage. The device is housed in a TO-220 package for through-hole mounting. Key electrical ratings include a maximum collector current of 6 A, a collector-emitter voltage (VCEO) of 100 V, and a collector-base voltage (VCBO) of 100 V. It features a maximum power dissipation of 65 W and an operating temperature range from -65°C to +150°C.
Feature Summary
- High gain performance coupled with very low saturation voltage due to planar technology and Base Island layout.
Applications
- Power amplification circuits
- Switching applications requiring high efficiency
- Audio output stages
Procurement Notes
Verify component authenticity and datasheet alignment before integration. Confirm that the specific BD242TU variant matches design requirements for voltage, current, and thermal management. Check for end-of-life status or obsolescence notices from the manufacturer to ensure long-term supply availability.
Selection Notes
Select this component for designs requiring robust PNP switching or linear operation at moderate power levels. Ensure the thermal solution supports the 65 W dissipation rating within the specified ambient temperature range. Verify compatibility with drive circuitry given the minimum hFE specifications.
Part Context
The BD242TU belongs to the BD242C family of complementary silicon power transistors. These devices are designed for general-purpose power applications, offering a balance of high current handling and voltage blocking capabilities in a standard TO-220 package suitable for heatsink mounting.
Replacement Considerations
Consult official documentation for direct pin-compatible substitutes within the same voltage and current class. Verify that any alternative maintains equivalent saturation voltage and gain characteristics to preserve circuit performance.
FAQ
What is the maximum collector current for the BD242TU?
The maximum continuous DC collector current is rated at 6 A.
Does the BD242TU use a specific internal structure for improved performance?
Yes, it uses planar technology with a 'Base Island' layout to achieve high gain and low saturation voltage.
What is the maximum operating junction temperature?
The maximum operating temperature is +150°C.
