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The BD243-S is an NPN silicon power transistor manufactured by Bourns. It features a maximum collector-emitter voltage of 100V and a continuous collector current of 6A. The device has a maximum power dissipation of 2W and operates within a junction temperature range of -65°C to 150°C. Key electrical parameters include a DC current gain (hFE) minimum of 15 at 3A and 4V, and a collector cutoff current maximum of 700µA. The saturation voltage is specified as 1.5V maximum at 1A and 6A. It is housed in a TO-220 package for through-hole mounting.
Verify component authenticity against official Bourns datasheets due to obsolete status. Confirm package integrity and pinout alignment with TO-220 standards. Check for lead-free compliance if required by specific assembly processes. Ensure storage conditions prevent moisture damage prior to soldering. Validate supplier documentation for traceability.
Select this component when a 100V NPN power transistor with 6A capability is required in a TO-220 package. Consider thermal management requirements given the 2W power dissipation limit. Evaluate compatibility with complementary BD244 devices for push-pull configurations. Assess operating temperature range suitability for the target environment.
The BD243 series represents a line of medium-power NPN silicon transistors widely used in general-purpose applications. The BD243-S variant specifically denotes the Bourns manufacturing version. These components are part of a complementary pair system, often paired with BD244 PNP counterparts for balanced performance in audio and power stages.
Public confirmed substitute part numbers: BD243, BD243C, BD243B.