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The BD243B is an NPN epitaxial silicon power transistor housed in a TO-220 package. It supports a maximum collector current of 6 A and a collector-emitter voltage of 80 V. The device provides a minimum DC current gain of 15 at 3 A and 30 at 0.3 A. It features a collector dissipation rating of 65 W at 25°C case temperature, with a junction temperature range from -65°C to +150°C.
Verify the specific manufacturer source, as Fairchild Semiconductor was acquired by onsemi. Confirm that the component meets RoHS compliance requirements if applicable to your project specifications. Ensure the TO-220 package dimensions align with your thermal management and PCB layout constraints before finalizing procurement.
Select this component when an NPN power transistor with an 80 V collector-emitter breakdown voltage is required. It is suitable for designs needing up to 6 A continuous collector current. Consider the complementary BD244B for push-pull configurations requiring matched PNP performance characteristics.
This part belongs to the BD243/A/B/C series of NPN power transistors. The suffix 'B' specifically denotes an 80 V collector-emitter voltage rating, distinguishing it from the 45 V (BD243) and 60 V (BD243A) variants within the same family.
The BD244B serves as the direct complementary PNP replacement or pairing component. Other general-purpose NPN power transistors with similar 80 V ratings and TO-220 packages may be considered if electrical parameters are verified against the datasheet.
The collector-emitter sustaining voltage (VCEO(sus)) is 80 V when measured at IC=30mA and IB=0.
The maximum DC collector current (IC) is rated at 6 A.
Yes, the BD243B is designed as the complementary NPN transistor to the BD244B PNP type.