BD243C

Overview

The onsemi BD243C is an NPN epitaxial silicon power transistor housed in a TO-220 package. It supports a maximum collector current of 6 A and a peak collector current of 10 A. The device features a collector-emitter voltage (VCEO) and collector-base voltage (VCBO) of 100 V, with an emitter-base voltage (VEBO) of 5 V. Collector dissipation reaches 65 W at a case temperature of 25°C. The junction temperature range spans from -65°C to +150°C.

Feature Summary

• High current gain bandwidth product suitable for linear and switching applications
• Complementary design available with the BD244 series

Applications

• Medium power linear amplifier circuits
• General purpose switching applications

Procurement Notes

Verify datasheet revision history and manufacturer origin, as Fairchild Semiconductor assets were acquired by onsemi. Confirm RoHS compliance status and specific ordering suffixes against official documentation. Ensure thermal management aligns with the specified 65 W dissipation limit at 25°C case temperature.

Selection Notes

Select this component for medium-power NPN requirements where high voltage handling up to 100 V is necessary. Consider the complementary BD244C for PNP configurations in push-pull topologies. Evaluate thermal resistance characteristics for heat sink sizing based on expected operating currents and ambient conditions.

Part Context

Part of the BD243/A/B/C family of medium power transistors. The 'C' suffix specifically denotes the 100 V rating variant, distinguishing it from lower voltage versions like the BD243B (80 V). Designed for robust performance in general-purpose electronic circuits requiring reliable power switching or amplification.

Replacement Considerations

BD244C serves as the direct PNP complement within the same series.