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The onsemi BD243CG is a single NPN epitaxial silicon planar power transistor designed for high-current applications. It features a maximum DC collector current of 6 A and a collector-emitter voltage rating of 100 V. The device offers a minimum DC current gain (hFE) of 15 and a transition frequency of 1 MHz. With a power dissipation capacity of 65 W, it operates within a temperature range of -65°C to +150°C. Packaged in a TO-220 three-pin through-hole housing, the component includes a collector-base voltage of 100 V and an emitter-base voltage of 5 V.
Verify the specific suffix 'CG' against the manufacturer's official datasheet to confirm pinout configuration and electrical tolerances. Ensure the procurement channel provides original packaging to prevent counterfeit components. Cross-reference the part number with the latest onsemi documentation to validate compliance with current RoHS standards and material declarations before finalizing orders.
Select this component when designing circuits that require moderate voltage blocking combined with substantial current delivery. The TO-220 package facilitates direct heatsinking for efficient thermal management. Compare the 1 MHz transition frequency against circuit requirements to ensure adequate bandwidth. Evaluate the hFE minimum of 15 to determine necessary base drive strength for saturation or linear operation modes.
This transistor belongs to the BD243C series of NPN power devices manufactured by onsemi. The series is engineered for robust performance in demanding power electronics environments. The BD243CG variant specifically denotes the TO-220 through-hole package option, distinguishing it from surface-mount alternatives within the broader product family.
Consult official substitution guides for equivalent NPN power transistors with matching 6 A and 100 V ratings. Verify pin compatibility and thermal resistance characteristics before implementing any alternative components in existing designs.