BD243CTU

Overview

The BD243CTU is an NPN epitaxial silicon power transistor manufactured by onsemi, housed in a TO-220AB through-hole package. It features a maximum collector-emitter voltage (VCEO) of 100 V DC and a collector-base voltage (VCBO) of 100 V DC. The device supports a continuous collector current (IC) of 6 A and a maximum power dissipation (Pd) of 65 W at 25°C case temperature. Key electrical characteristics include a minimum DC current gain (hFE) of 15 and a maximum transition frequency (ft) of 1 MHz. The emitter-base voltage (VEBO) is rated at 5 V. Operating temperatures range from -65°C to 150°C junction temperature.

Feature Summary

• High current handling capability with a 6 A continuous collector current rating for robust power switching applications.
• High voltage tolerance with 100 V breakdown ratings for both collector-emitter and collector-base configurations.
• Efficient thermal management design allowing up to 65 W power dissipation when mounted to a heatsink.
• Complementary pairing available with the BD244C PNP transistor for push-pull circuit topologies.

Applications

• Linear regulator circuits requiring high current output stages
• Audio amplifier output stages utilizing complementary symmetry designs
• General-purpose switching applications within specified voltage and current limits

Procurement Notes

Verify the specific suffix TU against official onsemi documentation to confirm packaging details and compliance status. Ensure the procurement channel provides valid traceability for the TO-220AB package variant. Cross-reference the manufacturer part number BD243CTU with the base series BD243C specifications to confirm functional equivalence. Request datasheets directly from authorized distributors to validate current manufacturing status and lead times.

Selection Notes

Select this component when designing circuits requiring an NPN power transistor with 100 V blocking capability and 6 A current capacity. Consider the TO-220AB package for applications necessitating direct board mounting or external heatsinking. Evaluate the thermal resistance requirements to ensure the 65 W dissipation limit is not exceeded under operating conditions. Pair with the BD244C PNP counterpart if a complementary pair is required for bridge or push-pull configurations.

Part Context

The BD243CTU belongs to the BD243C series of medium-power linear and switching transistors produced by onsemi. This series is designed as the NPN complement to the BD244C PNP transistor family. Manufactured using planar technology with a 'Base Island' layout, these devices offer high gain and low saturation voltage characteristics suitable for demanding analog and digital power applications.

Replacement Considerations

The BD243CG is a verified alternative from onsemi offering identical electrical specifications in a compatible TO-220 package. Other generic equivalents may exist but require verification of pinout compatibility and absolute maximum ratings against the original BD243CTU datasheet before substitution.