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The BD244BTU is a PNP silicon bipolar junction transistor (BJT) manufactured by onsemi. It is housed in a TO-220-3 through-hole package. The device features a maximum collector-emitter voltage of 100 V and a maximum collector-base voltage of 100 V. It supports a continuous collector current of up to 6 A, with a peak collector current rating of 10 A. Power dissipation reaches 65 W. The gain-bandwidth product is 3 MHz. Operating temperature ranges from -65 °C to +150 °C.
Verify the specific suffix 'BTU' against official datasheets to confirm exact electrical tolerances and packaging variations. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Check for end-of-life notifications as older BJT series may face discontinuation risks. Ensure the supplier provides valid traceability documentation for critical industrial applications.
Select this component when a PNP transistor with 100 V breakdown and 6 A continuous current capacity is required. The TO-220-3 package facilitates heatsinking for high-power dissipation scenarios. Compare hFE minimum values at specified test conditions against circuit requirements. Ensure the operating temperature range meets the environmental constraints of the target application.
This part belongs to the BD244C series of power transistors. It serves as a complementary counterpart to NPN devices in push-pull configurations. The series is designed for general-purpose power amplification and switching tasks. It utilizes standard silicon planar technology for reliable performance in demanding electronic environments.
Consult official cross-reference guides for verified substitutes. Ensure replacement parts match the TO-220-3 package and PNP polarity. Verify that voltage and current ratings meet or exceed original specifications.