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The BD244C is a silicon Epitaxial-Base PNP power transistor manufactured by STMicroelectronics. It is housed in a JEDEC TO-220 plastic package and serves as the complementary counterpart to the BD243C NPN device. Designed for medium power linear and switching applications, it features a collector-emitter voltage of 100 V, a continuous collector current of 6 A, and a peak collector current of 10 A. The component supports a total dissipation of 65 W at 25°C case temperature with a maximum operating junction temperature of 150°C.
Verify datasheet revision dates and manufacturer origin upon order confirmation. Confirm that the specific lot matches the required electrical characteristics for your application. Ensure proper handling procedures are followed during installation to maintain device integrity and reliability standards.
Select this component when a PNP solution is required to complement an existing BD243C NPN design. Evaluate thermal management requirements carefully, as the device relies on case mounting for optimal heat dissipation. Verify that the 100 V rating meets the circuit's maximum voltage stress conditions.
This component belongs to the BD243/BD244 series of complementary silicon power transistors. The series includes variants with different voltage ratings (B and C suffixes). The BD244C specifically provides the PNP equivalent to the BD243C, ensuring matched characteristics for push-pull or differential amplifier configurations in power electronics designs.
The BD244B is a lower voltage variant within the same series. Other manufacturers produce functionally equivalent parts under the same designation. Verify pinout compatibility and thermal resistance values before substituting with components from alternative suppliers.