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The onsemi BD244CG is a silicon PNP power transistor housed in a TO-220 package. It features a maximum collector-emitter voltage (VCEO) of 100 V and a continuous collector current (IC) of 6 A. The device has a maximum power dissipation (Pd) of 65 W at 25°C ambient temperature. Key electrical parameters include a collector-base voltage (VCBO) of 100 V, an emitter-base voltage (VEBO) of 5 V, and a minimum DC current gain (hFE) of 30 at IC = -300 mA and VCE = -4 V. The transition frequency (fT) is specified as 3 MHz. Operating temperatures range from -65°C to +150°C.
Verify the specific suffix 'CG' against the manufacturer's latest datasheet to confirm exact binning or packaging variations. Ensure the component matches the required PNP polarity and TO-220 form factor for your design. Cross-reference the hFE gain range and fT specifications with your circuit requirements before finalizing procurement.
Select this component when a PNP counterpart to the BD243C NPN transistor is required. The 6 A current rating and 100 V voltage breakdown define its operational limits. Consider the 65 W power dissipation and TO-220 thermal characteristics for heat sink requirements. Verify that the 3 MHz transition frequency meets the speed demands of the intended switching or linear application.
The BD244CG belongs to the BD244C series of silicon PNP power transistors manufactured by onsemi. This series is designed as the complementary pair to the BD243C NPN transistors, facilitating push-pull amplifier configurations. The components are engineered for general-purpose power applications requiring reliable performance in both linear and switching modes within standard industrial temperature ranges.
The BD244C is the direct functional complement to the BD243C. For replacement, verify pinout compatibility (Emitter, Base, Collector) and ensure the substitute part meets or exceeds the 100 V VCEO and 6 A IC ratings. Check if alternative packages like TO-220AB are acceptable for physical integration.