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The BD249C-S is an NPN silicon power transistor manufactured by Bourns Inc. It is designed for complementary use with the BD250 series PNP transistors. The component features a maximum power dissipation of 125 W at a case temperature of 25°C. It operates within a minimum temperature range of -65°C and a maximum operating temperature of +150°C. The device utilizes a through-hole SOT-93 package, providing robust performance for high-power switching applications.
Verify the specific suffix 'S' against official Bourns documentation to confirm the exact package type and electrical ratings. Ensure that the required power dissipation of 125 W can be maintained under your specific thermal management conditions. Confirm compatibility with the intended BD250 series counterpart if used in push-pull configurations.
Select this component when a high-current NPN transistor is required to complement a BD250 series PNP device. Consider the SOT-93 through-hole package constraints and the necessity for adequate heat sinking to achieve the rated 125 W dissipation. Evaluate the wide operating temperature range suitability for harsh environments.
This part belongs to the Bourns bipolar transistor family, specifically engineered for power applications. It serves as the NPN counterpart to the BD250 series, facilitating balanced design in complementary symmetry circuits. The product line emphasizes reliability and thermal stability for demanding electronic systems.
Consult official Bourns substitution guides for verified equivalents. Generic replacements may not match the specific 125 W rating or complementary design intent. Verify pinout and package dimensions before integrating alternative sources.