BD249C

Overview

The BD249C is a silicon NPN power transistor manufactured by ISC, designed for high-current applications. It features a TO-3PN package and supports a continuous collector current of 25 A. The device provides a collector-emitter voltage (VCEO) of 100 V and a collector-base voltage (VCBO) of 45 V. It dissipates up to 125 W at a case temperature of 25°C. The component serves as the complement to the BD250/A/B/C series.

Feature Summary

• High current handling capability with 25 A continuous collector current
• Robust thermal performance allowing 125 W power dissipation at 25°C case temperature
• Complementary design matching the BD250/A/B/C series

Applications

• Power switching circuits requiring high current capacity
• Complementary pairs in amplifier stages using BD250 series transistors
• Industrial power control systems

Procurement Notes

Verify manufacturer origin as ISC rather than onsemi, despite potential catalog overlaps. Confirm the specific voltage variant (BD249C indicates 100V VCEO) matches circuit requirements. Check for TO-3PN package availability and lead times directly with the supplier. Ensure compliance with RoHS standards if required by the end application.

Selection Notes

Select this component when a high-current NPN transistor is needed to pair with BD250 PNP devices. The 100V rating suits moderate voltage power applications. Consider the TO-3PN package for through-hole mounting and heat sinking needs. Verify that the 25A current rating aligns with the load requirements without exceeding thermal limits.

Part Context

The BD249C belongs to a family of silicon NPN power transistors. It is specifically engineered as the complementary counterpart to the BD250/A/B/C series, which are PNP types. This pairing allows for balanced push-pull configurations in power electronics. The TO-3PN package provides mechanical stability and efficient heat transfer for high-power operations.