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The BD250-S is a PNP bipolar junction transistor manufactured by Bourns Inc., designed for high-current switching and amplification applications. It features a maximum DC collector current of 25 A and a collector-emitter voltage rating of 45 V. The device has an emitter-base voltage of 5 V and a power dissipation capacity of 125 W. Packaged in the SOT-93 through-hole format, it supports lead-free and RoHS compliance standards.
Verify the specific datasheet version from Bourns Inc. to confirm electrical characteristics and mechanical dimensions. Ensure compatibility with SOT-93 through-hole mounting requirements. Check for lead-free and RoHS compliance status if required by project specifications. Confirm that the 45 V collector-emitter voltage and 25 A current ratings meet the application's peak load demands.
Select the BD250-S when a PNP transistor with high current handling is required. The 45 V voltage rating suits low-to-medium voltage applications. Consider the SOT-93 package size for board space constraints. Evaluate thermal management needs due to the 125 W dissipation rating. Compare against alternatives like the BD250B-S if higher voltage ratings are necessary.
This component belongs to Bourns Inc.'s discrete semiconductor product line, specifically within their bipolar transistor series. It complements other high-power switching devices offered by the manufacturer. The BD250-S provides a standardized solution for industrial and consumer electronics requiring reliable PNP switching performance in a compact through-hole package.
The BD250B-S serves as a related variant offering an 80 V collector-emitter voltage rating while maintaining similar current capabilities.