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The BD250B-S is a PNP silicon power transistor manufactured by Bourns Inc., designed for high-current switching and amplification applications. It features a maximum collector-emitter breakdown voltage of 80V and a continuous collector current rating of 25A. The device has a maximum power dissipation of 3W and is housed in a TO-218-3 package. It is engineered for complementary use with the BD249 series, offering robust performance in demanding electronic circuits.
Verify the specific datasheet version to confirm package details, as some sources list SOT-93 while others specify TO-218-3. Ensure compliance with RoHS standards if required. Cross-reference official Bourns documentation for accurate electrical parameters before integration into circuit designs.
Select this component for PNP applications requiring 25A current handling and 80V voltage ratings. Consider thermal management due to the 3W power dissipation limit. Verify compatibility with complementary NPN transistors like the BD249 series for push-pull configurations.
The BD250B-S belongs to Bourns' bipolar transistor lineup, specifically optimized for power applications. It complements the BD249 series, providing a matched pair solution for efficient circuit design. This part supports reliable operation in environments requiring stable high-current performance.
Check for direct substitutes within the BD250x family or equivalent PNP transistors with matching 25A and 80V ratings. Ensure pinout compatibility and thermal characteristics align with existing board layouts.
The maximum continuous collector current is 25A.
Yes, it is designed for complementary use with the BD249 series.