BD37516STU

$0.10

Description：TRANS NPN 45V 2A TO-126-3
Series：-

SKU:a7dce7b6d0d6 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 45V 2A TO-126-3
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：NPN
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：1V @ 100mA, 1A
Current - Collector Cutoff (Max)：2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
Power - Max：25 W
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126-3
Grade：-
Qualification：-

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BD37516STU

Overview

The BD37516STU is an NPN epitaxial silicon bipolar junction transistor (BJT) manufactured by onsemi. It features a single transistor configuration housed in a TO-126 through-hole package with three pins. The device supports a maximum DC collector current of 2 A and a collector-emitter voltage (VCEO) of 45 V. Key electrical parameters include a collector-base voltage (VCBO) of 50 V, an emitter-base voltage (VEBO) of 5 V, and a power dissipation rating of 25 W. The minimum DC current gain (hFE) is specified at 40, with a maximum operating temperature of +150°C.

Feature Summary

Epitaxial silicon construction for stable high-voltage operation
High power dissipation capability suitable for demanding thermal environments
Through-hole mounting design for robust mechanical integration

Applications

General-purpose amplifier circuits
Low-speed switching applications
Power supply regulation stages

Procurement Notes

Verify the specific manufacturer lot code and date codes upon receipt to ensure component authenticity. Confirm that the physical package dimensions match the TO-126 specification required for your PCB footprint. Check for any handling restrictions related to the through-hole lead structure during assembly processes.

Selection Notes

Select this component when a 2 A NPN BJT with 45 V breakdown voltage is required. Ensure the application's thermal management can support the 25 W power dissipation rating. Verify that the minimum hFE of 40 meets the circuit's drive requirements compared to higher-gain alternatives.

Part Context

This part belongs to the broader category of onsemi's discrete bipolar transistors. It utilizes standard silicon technology within the TO-126 form factor, distinguishing it from surface-mount or high-frequency RF variants. It serves as a general-purpose solution rather than a specialized audio or logic device.