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Product Detailed Parameters
- Description：TRANS NPN 60V 2A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 100mA, 1A
- Current - Collector Cutoff (Max)：2µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
- Power - Max：25 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
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Overview
The BD3776STU is a single NPN bipolar junction transistor (BJT) manufactured by onsemi. It is designed for through-hole mounting in a TO-126-3 package, also referred to as TO-225AA. The device features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 2 A. With a power dissipation capacity of 25 W, it supports high-current switching applications requiring robust thermal performance.
Feature Summary
- NPN configuration optimized for general-purpose switching
- Through-hole TO-126-3 package for reliable mounting
- High current handling capability up to 2 A
- Robust power dissipation rated at 25 W
Applications
- General-purpose switching circuits
- Power management modules
- Industrial control systems
Procurement Notes
Verify the specific datasheet revision and electrical characteristics directly from onsemi official documentation before integration. Confirm that the TO-126-3 package dimensions match the target PCB footprint requirements. Ensure thermal management solutions are adequate for the 25 W power dissipation rating under expected operating conditions to maintain reliability.
Selection Notes
Select this component when a standard NPN BJT with 60 V breakdown and 2 A current capacity is required. The TO-126-3 package offers a balance between power handling and board space. Consider thermal resistance and ambient temperature constraints during design to ensure the 25 W rating is not exceeded in practical applications.
Part Context
This part belongs to the family of single bipolar transistors offered by onsemi. It serves as a discrete semiconductor solution for medium-power applications. The TO-126-3 form factor is widely used in legacy and modern designs requiring through-hole assembly for enhanced mechanical stability and heat sinking capabilities.
Replacement Considerations
BD37725STU: Similar NPN BJT with comparable voltage and current ratings.
FAQ
What is the package type for the BD3776STU?
It uses a TO-126-3 (TO-225AA) through-hole package.
Is the BD3776STU an NPN or PNP transistor?
It is an NPN bipolar junction transistor.
