ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS NPN 80V 2A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 100mA, 1A
- Current - Collector Cutoff (Max)：2µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
- Power - Max：25 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
Download product information
Overview
The BD3796STU is a single NPN bipolar junction transistor manufactured by onsemi, housed in a TO-126-3 through-hole package. It features a maximum collector-emitter voltage (VCEO) of 80 V and a maximum collector-base voltage (VCBO) of 80 V. The device supports a continuous DC collector current (IC) of 2 A and offers a high power dissipation rating of 25 W. It has a minimum DC current gain (hFE) of 25 and a maximum emitter-base voltage (VEBO) of 5 V. The component operates within a temperature range up to 150°C.
Feature Summary
- High power dissipation capability of 25 W for robust thermal performance
- NPN configuration with 80 V voltage ratings for collector-emitter and collector-base terminals
- Through-hole TO-126-3 packaging designed for reliable mounting
Applications
- General-purpose switching applications
- Linear amplifier circuits
- Power management systems requiring medium-current handling
Procurement Notes
Verify the manufacturer part number BD3796STU against official onsemi documentation to ensure authenticity. Confirm that the TO-126-3 package type matches your board layout requirements. Check for any specific ordering suffixes or variants if different electrical characteristics are needed. Ensure compliance with relevant safety standards for the intended application environment.
Selection Notes
Select this component when an NPN BJT with 2 A current capacity and 80 V voltage tolerance is required. The TO-126-3 package suits applications needing efficient heat dissipation via chassis or heatsink mounting. Consider the 25 W power rating for thermal design calculations. Verify that the hFE range meets the circuit's gain requirements.
Part Context
This transistor belongs to the broader category of discrete semiconductor devices from onsemi. It is classified as a single NPN bipolar junction transistor (BJT). The TO-126-3 package is a standard form factor for medium-power transistors, facilitating through-hole assembly in various electronic designs.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 80 V, 2 A, and 25 W specifications. Verify package compatibility and pinout alignment before integration.
