BD434S

Overview

The BD434S is a PNP silicon epitaxial-base power transistor manufactured by onsemi. It is designed for medium-power linear and switching applications, serving as the complementary device to NPN types such as the BD433. The component features a maximum collector current of 4 A and a collector-emitter voltage rating of 22 V. It utilizes a TO-126 flange mount package with through-hole terminals. The device exhibits a minimum DC current gain (hFE) of 50 and a transition frequency (fT) of 3 MHz.

Feature Summary

• Complementary PNP configuration paired with NPN power transistors for push-pull or bridge circuits
• Robust silicon epitaxial-base construction suitable for high-current switching environments
• Flange mount plastic package design facilitating efficient thermal dissipation

Applications

• Car-radio output stages
• Medium power linear amplifier circuits
• General purpose switching applications

Procurement Notes

Verify the specific suffix 'S' against official datasheets to confirm package variations or compliance updates. Confirm RoHS status via Material Composition Declaration documents. Check lifecycle status as complementary devices may be obsolete. Ensure lead frame material matches system requirements.

Selection Notes

Select this component when a PNP counterpart to the BD433 series is required. Evaluate thermal resistance based on the TO-126 flange mount capability. Verify that the 22V voltage rating meets circuit demands. Consider the 4A current limit for load matching in audio or power supply designs.

Part Context

This part belongs to the BD43x family of complementary silicon power transistors. The series includes NPN types (BD433, BD435, BD437) and PNP types (BD434, BD436, BD438). These devices are engineered for use in medium-power applications where matched performance between NPN and PNP pairs is beneficial for circuit symmetry.

Replacement Considerations

• BD434