BD435S

Overview

The BD435S is a plastic medium-power NPN epitaxial silicon transistor manufactured by ON Semiconductor. It features a TO-126 package with bulk packing. The device supports a collector-emitter voltage of 32 V and a continuous collector current of 4 A. It provides a maximum power dissipation of 36 W at a case temperature of 25°C. The component operates within a junction temperature range of -65°C to 150°C.

Feature Summary

• Designed for medium power linear and switching applications
• Complements the BD438 PNP type
• Available in lead-free packages

Applications

• Amplifier circuits
• Switching applications

Procurement Notes

Verify the exact ordering suffix against the official ON Semiconductor database, as Fairchild part numbers may have been updated following integration. Confirm that the specific batch matches the required TO-126 bulk packaging format. Ensure compliance with RoHS standards if applicable to your manufacturing process. Validate all operating parameters for your specific application requirements before finalizing procurement.

Selection Notes

Select this component when a medium-power NPN transistor with a 32 V collector-emitter rating is required. Consider the complementary BD438 for push-pull configurations. Evaluate thermal management needs carefully, as power dissipation drops significantly above 25°C case temperature. Verify that the TO-126 package dimensions fit your board layout constraints.

Part Context

This transistor belongs to the BD433/435/437 series of NPN epitaxial silicon transistors. The series includes variants with different voltage ratings: BD433 (22 V), BD435 (32 V), and BD437 (45 V). All share similar physical characteristics and current handling capabilities, differing primarily in their breakdown voltage specifications.

Replacement Considerations

BD435STU offers the same electrical performance but utilizes rail packing instead of bulk.