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Product Detailed Parameters
- Description：TRANS NPN 32V 4A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 200mA, 2A
- Current - Collector Cutoff (Max)：100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 10mA, 5V
- Power - Max：36 W
- Frequency - Transition：3MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
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Overview
The BD435STU is an NPN epitaxial silicon transistor in a TO-126 rail package. It features a collector-emitter voltage of 32V and a continuous collector current of 4A. The device supports a pulse collector current of 7A and offers a DC current gain ranging from 40 to 130 depending on operating conditions. It includes a maximum collector dissipation of 36W at 25°C case temperature and operates up to a junction temperature of 150°C.
Feature Summary
- Designed for medium power linear and switching applications
- Complementary PNP types available as BD438 and BD442
Applications
- Amplifier circuits
- Switching applications
Procurement Notes
Verify the specific ordering suffix against ON Semiconductor documentation, as Fairchild part numbers with underscores may require conversion to dashes during integration. Confirm that the rail packing method matches your assembly requirements. Ensure compliance with life support policies and verify all operating parameters for your specific application environment before finalizing procurement.
Selection Notes
Select this component when a 32V NPN transistor with 4A continuous current capability is required. Consider the complementary BD438 for push-pull configurations. Evaluate thermal management needs carefully, as the 36W dissipation rating depends on maintaining the case temperature at 25°C. Validate the DC current gain specifications against your circuit's drive requirements.
Part Context
This device belongs to the BD433/435/437 series of NPN epitaxial silicon transistors manufactured by ON Semiconductor. Originally developed under Fairchild Semiconductor, these components are now managed within the ON Semiconductor portfolio following corporate integration. The series provides standardized pinouts and electrical characteristics for general-purpose power applications.
Replacement Considerations
BD435S (Bulk packaging)
FAQ
What is the maximum collector-emitter voltage for the BD435?
The maximum collector-emitter voltage (VCER) for the BD435 is 32V.
Is the BD435 suitable for use in life support systems?
No, ON Semiconductor products are not designed, intended, or authorized for use as critical components in life support systems without express written approval.
