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Product Detailed Parameters
- Description：TRANS PNP 32V 4A TO-225-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 200mA, 2A
- Current - Collector Cutoff (Max)：100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 2A, 1V
- Power - Max：36 W
- Frequency - Transition：3MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-225-3
- Grade：-
- Qualification：-
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Overview
The BD436G is a complementary PNP silicon power transistor belonging to the BD43x series, designed for medium-power linear and switching applications. It serves as the PNP counterpart to NPN devices such as the BD433, BD435, and BD437. The component is housed in a JEDEC SOT-32 plastic package, which corresponds to the TO-126 form factor. While originally intended for general-purpose use, specific variants within this family are noted for suitability in car-radio output stages.
Feature Summary
- Complementary PNP configuration paired with NPN equivalents
- Suitable for medium-power linear and switching operations
- JEDEC SOT-32 plastic packaging
Applications
- Medium-power linear amplifier circuits
- Switching power supply topologies
- Car-radio output stages
Procurement Notes
Verify current manufacturing status before design finalization, as availability may be limited. Confirm exact package pinout compatibility with existing PCB footprints. Review latest compliance documentation for material composition declarations. Ensure thermal management strategies align with the device's power dissipation capabilities in the selected enclosure.
Selection Notes
Select this component when a PNP solution is required to complement existing NPN transistors in a push-pull or differential stage. Consider the SOT-32 package constraints regarding thermal resistance and board space. Evaluate if the medium-power rating meets the specific load requirements of the target application without excessive derating.
Part Context
The BD436G is part of a broader family of complementary silicon epitaxial-base power transistors. This series includes NPN types (BD433, BD435, BD437) and their corresponding PNP counterparts (BD434, BD436, BD438). These devices share similar structural characteristics and are engineered for robust performance in standard industrial and consumer electronics environments.
Replacement Considerations
The BD5236G-1 is identified as a similar level replacement with the same SSOP5 package. Verify functional equivalence and parameter alignment before substitution.
