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The onsemi BD438G is a plastic medium-power silicon PNP transistor housed in a TO-225 (CASE 77-09) package. It features a collector-emitter voltage (VCEO) of 45 Vdc and a collector-base voltage (VCBO) of 45 Vdc. The device supports a maximum continuous collector current (IC) of 4.0 Adc and a base current (IB) of 1.0 Adc. Total device dissipation is rated at 36 W at a case temperature of 25°C, with a thermal resistance junction-to-case of 3.5 °C/W. The emitter-base breakdown voltage (VEBO) is 5.0 Vdc. Operating and storage junction temperatures range from -55°C to +150°C.
Verify the specific part number against the official datasheet to ensure correct voltage rating and polarity. Confirm that the TO-225 package style matches the design requirements. Check for any recent product discontinuation notices or recommended new design alternatives provided by the manufacturer before finalizing procurement plans.
Select this component for designs requiring a 45V PNP power transistor with high current handling capabilities. Ensure adequate heat sinking is implemented to maintain the junction temperature within the specified operating range during high dissipation scenarios. Verify compatibility with complementary NPN types such as the BD437 for push-pull configurations.
The BD438G belongs to a series of plastic medium-power silicon PNP transistors manufactured by onsemi. This series includes variants with different voltage ratings, specifically the BD436G, BD440G, and BD442G. These devices are intended for use in medium power linear and switching applications, offering a robust solution for general-purpose power amplification tasks.
Consult the manufacturer for information regarding discontinued devices. Complementary NPN types include BD437.