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The BD440S is a PNP epitaxial silicon transistor manufactured by onsemi, designed for medium-power applications. It features a maximum collector-emitter breakdown voltage of 60 V and supports a continuous collector current of 4 A. The device operates with a transition frequency of 3 MHz and can dissipate up to 36 W of power. Packaged in a TO-126-3 through-hole configuration, it provides reliable performance for general-purpose switching and amplification tasks.
Verify the specific datasheet revision when sourcing this component, as manufacturing updates may occur. Confirm that the TO-126-3 package dimensions align with your PCB footprint requirements. Ensure that the thermal management design accounts for the 36 W dissipation limit under actual operating conditions. Check for any obsolescence notices from the manufacturer before finalizing the bill of materials.
Select the BD440S when a PNP transistor with 60 V breakdown and 4 A current capacity is required. Consider the TO-126-3 package for through-hole mounting needs. Evaluate thermal constraints carefully due to the 36 W power rating. Compare against alternative PNP devices if lower current or different voltage ratings better suit the specific circuit topology.
This component belongs to the family of bipolar junction transistors (BJT) produced by onsemi. It serves as a discrete semiconductor device for analog and digital signal processing. The BD440S complements other NPN counterparts in the same series, providing balanced options for push-pull configurations and complementary switching designs in electronic systems.
Consult official cross-reference lists for direct substitutes. Verify pinout compatibility and electrical parameters such as hFE and breakdown voltages before substitution. Ensure the replacement part matches the TO-126-3 package type for mechanical fit.