BD441G

$1.16

Description：TRANS NPN 80V 4A TO-126
Series：-

SKU:e173a1a7a098 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 80V 4A TO-126
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：4:00 AM
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：800mV @ 300mA, 3A
Current - Collector Cutoff (Max)：100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 500mA, 1V
Power - Max：36 W
Frequency - Transition：3MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126
Grade：-
Qualification：-

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BD441G

Overview

The BD441G is a PNP silicon bipolar junction transistor (BJT) manufactured by onsemi. It is designed for through-hole mounting in a TO-225-3 package. The device supports a maximum continuous collector current of 4 A and a collector-emitter voltage (VCEO) of 80 V. Key electrical characteristics include a collector-base voltage (VCBO) of 80 V, an emitter-base voltage (VEBO) of 5 V, and a power dissipation (Pd) of 36 W. The saturation voltage (VCEsat) is specified at 800 mV, with a gain-bandwidth product (fT) of 3 MHz. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

PNP polarity configuration suitable for high-current switching applications
Robust thermal performance with 36 W power dissipation capability
High voltage tolerance with 80 V collector-emitter rating

Applications

General-purpose power switching circuits
Motor control interfaces
Power supply output stages

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly from onsemi official documentation before integration. Confirm that the TO-225-3 package dimensions match the target PCB footprint requirements. Ensure thermal management solutions are adequate for the 36 W power dissipation limit under expected operating conditions. Cross-reference the manufacturer part number BD441G with authorized distributor listings to confirm authenticity and supply chain reliability.

Selection Notes

Select this component when a PNP BJT with 4 A current handling and 80 V voltage rating is required in a through-hole format. The TO-225-3 package provides efficient heat dissipation for high-power applications. Consider the 3 MHz transition frequency for moderate-speed switching needs. Evaluate thermal resistance parameters against the system's heat sink capabilities to ensure operation within the +150°C maximum junction temperature limit.

Part Context

The BD441G belongs to the BD44x series of PNP transistors from onsemi, which are engineered for robust power switching tasks. This series utilizes silicon technology optimized for high current density and reliable performance in industrial environments. The TO-225-3 package is a standard form factor for through-hole mounting, facilitating easy integration into legacy and new designs requiring discrete power transistors.