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The BD533 is an NPN power transistor manufactured using Planar technology with a Base Island layout. It provides high gain performance and low saturation voltage. The device operates with a collector current of 8 A and total dissipation of 50 W at 25°C case temperature. Collector-emitter voltage ratings are 45 V, while the emitter-base voltage is rated at 5 V. Maximum junction temperature reaches 150°C. It is housed in a TO-220 tube package.
Verify component authenticity through authorized STMicroelectronics distributors or verified supply chain channels. Confirm datasheet revision status (Rev 4) and package type (TO-220 Tube). Ensure environmental compliance requirements match ECOPACK specifications if applicable. Validate absolute maximum ratings against specific application thermal conditions before integration.
Select this component when high DC current gain and low saturation voltage are required for NPN power switching. Compare collector-emitter voltage ratings against circuit peak voltages. Consider thermal management solutions to maintain case temperatures within safe operating limits during continuous operation.
The BD533 belongs to a complementary series of power transistors including BD534, BD535, BD536, and BD537. These devices share similar manufacturing technologies but vary in voltage ratings. The BD533 specifically offers 45 V breakdown capabilities, distinguishing it from higher voltage variants like the BD535 and BD537.
BD535 and BD537 offer higher voltage ratings (60 V and 80 V respectively) with identical current and package specifications. BD534 serves as the PNP complementary counterpart.