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The BD538 is a silicon PNP power transistor manufactured by ISC, designed for medium-power linear and switching applications. It features a TO-220C package with the collector connected to the mounting base for efficient thermal dissipation. The device serves as the complement to the BD537 series. Key electrical characteristics include a collector-base voltage of 80V and an emitter-base voltage of 5V. It is optimized for low saturation voltage performance in general-purpose power applications.
Verify the manufacturer designation carefully, as the BD538 part number is primarily associated with ISC (Inchange Semiconductor) rather than onsemi. Confirm that the specific datasheet provided matches the required pinout and absolute maximum ratings for your circuit design. Ensure the TO-220C package dimensions align with your PCB footprint requirements before finalizing procurement.
Select this component when a PNP power transistor is required to complement existing NPN designs using the BD533/BD535/BD537 series. The TO-220C package is suitable for applications requiring direct mounting to heatsinks due to the collector-to-case connection. Consider the 80V breakdown voltage limits when designing for higher voltage environments.
The BD538 belongs to a family of silicon PNP power transistors intended for robust power handling. Unlike standard TO-220 packages, the TO-220C variant specifically integrates the collector with the metal tab, simplifying thermal management in high-current scenarios. This configuration distinguishes it from isolated collector variants found in other power transistor families.
Official substitutes include the BD537, which shares complementary pairing characteristics within the same product family.