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Product Detailed Parameters
- Description：TRANS NPN 80V 5A TO-220
- Series：-
- Mfr：Bourns Inc.
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：5:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：1.5V @ 1A, 5A
- Current - Collector Cutoff (Max)：300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：12 @ 3A, 4V
- Power - Max：2 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The BD539B-S is an NPN bipolar junction transistor manufactured by Bourns Inc., designed for switching and amplification applications in power electronics. It features a collector current rating of 5A and a voltage rating of 80V. The component is housed in a TO-220 package, suitable for through-hole mounting. This device provides robust performance for general-purpose power control tasks.
Feature Summary
- NPN bipolar transistor configuration optimized for power switching and amplification
- High collector current capability supporting demanding power electronics loads
- Through-hole TO-220 package design facilitating secure board mounting
Applications
- Power electronics switching circuits
- Amplification stages in electronic systems
- General-purpose power control applications
Procurement Notes
Verify the obsolete status of this specific part number before procurement planning. Confirm that substitute components meet all required electrical specifications and physical dimensions. Ensure compatibility with existing PCB layouts and thermal management requirements when transitioning to alternative transistors.
Selection Notes
Select replacement options based on matching NPN polarity, comparable current ratings, and identical package styles. Evaluate thermal resistance characteristics to ensure adequate heat dissipation. Verify voltage ratings align with circuit operating conditions to prevent breakdown during high-stress operations.
Part Context
This component belongs to Bourns Inc.'s discrete semiconductor portfolio, specifically within their bipolar transistor lineup. It serves as a fundamental active element for controlling higher power levels using smaller signal inputs, commonly utilized in industrial and consumer electronic power regulation designs.
Replacement Considerations
Suitable substitutes include 2N6123 PBFREE, 2N6488G, TIP29BG, TIP31BG, and TIP41BG. All listed alternatives are through-hole TO-220-3 packages and ROHS3 compliant, ensuring mechanical and environmental compatibility.
