BD545C-S

Overview

The BD545C-S is a PNP bipolar junction transistor (BJT) manufactured by Bourns Inc. It is housed in a TO-220AB plastic package with three terminals and a collector-connected case. The device supports a maximum collector current of 5 A and a collector-emitter voltage of 100 V. It features a minimum DC current gain (hFE) of 12 and operates at temperatures up to 150 °C. The component is lead-free and RoHS compliant.

Feature Summary

• Single PNP bipolar junction transistor configuration
• High current handling capability for power applications
• Robust thermal performance with high maximum operating temperature

Applications

• Power switching circuits
• Amplifier stages requiring PNP topology
• Industrial control systems

Procurement Notes

Verify the specific manufacturer datasheet for the BD545C-S to confirm electrical characteristics and mechanical dimensions. Ensure the TO-220AB package matches your thermal management requirements. Confirm RoHS compliance status if required by your assembly process specifications.

Selection Notes

Select this component when a PNP transistor with 100V breakdown and 5A continuous current capacity is needed. The TO-220AB package facilitates effective heat dissipation for high-power operations. Verify that the hFE range meets your circuit's drive requirements.

Part Context

This part belongs to the family of discrete bipolar transistors designed for general-purpose power switching. It provides a reliable solution for applications requiring moderate voltage blocking and significant current handling within a standard through-hole mounting format.

Replacement Considerations

Consult official substitution guides for equivalent PNP transistors with matching voltage, current, and package specifications. Verify pinout compatibility before replacing the original component in existing designs.