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The BD650-S is a PNP Darlington bipolar junction transistor manufactured by Bourns Inc. It is designed for through-hole mounting in TO-220 packages. The component supports a maximum collector current of 8 A and a collector-emitter voltage rating of 100 V. Power dissipation is rated at 2 W under standard conditions, with thermal derating required up to a case temperature of 150°C. The device features a high DC current gain typical of Darlington configurations and a collector cutoff current of 500 µA.
Verify the obsolete status of the BD650-S before procurement planning. Confirm availability of authorized substitutes from Bourns or other manufacturers. Ensure that replacement components match the TO-220 footprint and electrical ratings. Check datasheet revisions for any changes in thermal characteristics or pinout definitions prior to finalizing supply chain decisions.
Select this component for applications requiring high current handling in a PNP configuration. Consider the thermal management requirements due to the 2 W power rating and linear derating curve. Verify that the load current does not exceed 8 A continuously. Ensure the operating voltage remains within the 100 V limit. Evaluate alternative Darlington transistors if the specific part is unavailable.
The BD650-S belongs to the single bipolar transistor category within Bourns Inc.'s discrete semiconductor product line. It is specifically classified as a PNP Darlington transistor. The product is intended for general-purpose power switching and amplification tasks. It is distinct from Bourns' resistor and sensor lines, focusing on active semiconductor devices.
The BD650-S is listed as obsolete. Substitutes must be verified against the original specifications. Ensure replacement parts maintain the PNP polarity, Darlington structure, and TO-220 package. Cross-reference electrical parameters such as Vceo, Ic, and power dissipation to guarantee circuit compatibility.