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Product Detailed Parameters
- Description：TRANS NPN DARL 120V 8A TO-220
- Series：-
- Mfr：Bourns Inc.
- Package：Tube
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：8:00 AM
- Voltage - Collector Emitter Breakdown (Max)：120 V
- Vce Saturation (Max) @ Ib, Ic：2.5V @ 50mA, 5A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 3A, 3V
- Power - Max：2 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The BD651-S is an NPN silicon power Darlington transistor manufactured by Bourns Inc. It features a maximum DC collector current of 8 A and a collector-base voltage (VCBO) of 140 V. The device is designed for complementary use with the BD645, BD647, BD649, and BD651 series components. It offers a minimum hFE of 750 at 3 V and 3 A. The component supports a power dissipation of 62.5 W at a 25°C case temperature and utilizes a TO-220 package for through-hole mounting.
Feature Summary
- NPN silicon power Darlington configuration providing high current gain
- Designed for complementary operation within the BD645/BD647/BD649/BD651 family
- Supports 62.5 W power dissipation at specified case temperatures
Applications
- High-power switching applications requiring high current gain
- Complementary driver circuits paired with BD645 or BD647 series transistors
- Power amplifier stages utilizing NPN Darlington topology
Procurement Notes
Verify the specific ordering suffix to ensure compatibility with required thermal and mechanical specifications. Confirm RoHS compliance status as indicated in official documentation. Cross-reference datasheet parameters against application requirements to validate voltage and current ratings. Ensure proper handling procedures are followed due to the through-hole package type and power dissipation characteristics.
Selection Notes
Select this component when high current drive capability and elevated voltage tolerance are required in a single package. The Darlington structure provides significant current amplification suitable for direct interface with lower-current control signals. Consider the complementary BD645 series for push-pull configurations. Evaluate thermal management needs given the 62.5 W dissipation rating and TO-220 form factor.
Part Context
The BD651-S belongs to Bourns' NPN silicon power Darlington transistor lineup. It is engineered for robust performance in power electronics. The part is often utilized alongside its PNP counterpart, the BD645, to create balanced output stages. This series emphasizes high current handling and reliable operation in demanding industrial and consumer applications.
Replacement Considerations
Official complementary parts include BD645, BD647, BD649, and BD651. Verify pinout and electrical symmetry when substituting within the family. Ensure thermal resistance and package dimensions match existing board layouts.
