BD652-S

Overview

The BD652-S is a PNP Darlington bipolar junction transistor manufactured by Bourns Inc. It is designed for through-hole mounting in the TO-220 package. The device features a maximum collector-emitter breakdown voltage of 120 V and a continuous collector current rating of 8 A. It has a power dissipation capacity of 2 W, making it suitable for high-current switching applications requiring robust gain characteristics.

Feature Summary

• PNP Darlington configuration providing high current gain
• Through-hole TO-220 package for reliable thermal management
• Rated for 120 V collector-emitter breakdown voltage
• Capable of handling 8 A continuous collector current

Applications

• High-current switching circuits
• Power regulation systems
• Industrial control interfaces

Procurement Notes

Verify component authenticity against official Bourns documentation. Confirm the specific suffix matches the required electrical specifications. Check for RoHS compliance status if environmental regulations apply to the assembly process. Ensure the TO-220 footprint aligns with the target PCB design constraints.

Selection Notes

Select this component when high current drive capability is required alongside moderate voltage blocking. The Darlington structure offers superior gain compared to standard BJTs. Consider the thermal resistance of the TO-220 package for heat dissipation requirements in the final enclosure design.

Part Context

This part belongs to the discrete semiconductor product category, specifically single bipolar transistors. It is an obsolete item within the Bourns portfolio. Engineers should review available substitutes or alternative series from the manufacturer for new designs.

Replacement Considerations

Public confirmed substitute part numbers are not explicitly listed in the provided source material. Consult official distributor databases for cross-reference data.