BD675A

$0.24

Description：TRANS NPN DARL 45V 4A TO-126
Series：-

SKU:7859904ec469 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN DARL 45V 4A TO-126
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：4:00 AM
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：2.8V @ 40mA, 2A
Current - Collector Cutoff (Max)：500µA
DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A, 3V
Power - Max：40 W
Frequency - Transition：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126
Grade：-
Qualification：-

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BD675A

Overview

The BD675A is a single NPN epitaxial silicon Darlington transistor manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 45 V and a maximum emitter-base voltage (VEBO) of 5 V. The device supports a continuous DC collector current of 4 A with a power dissipation rating of 40 W. Key electrical characteristics include a minimum DC current gain (hFE) of 750 and a maximum collector cutoff current of 200 uA. It is housed in a TO-126 through-hole package, operates up to a maximum junction temperature of +150°C, and belongs to the BD675A series.

Feature Summary

High current gain capability suitable for amplification applications
Robust power handling with 40 W dissipation rating
Epitaxial silicon construction for reliable performance

Applications

General-purpose amplification circuits
Switching applications requiring high gain
Driver stages for power loads

Procurement Notes

Verify component authenticity and datasheet alignment before integration. Confirm RoHS and REACH compliance status via official documentation. Check for end-of-life notices or production change notifications. Ensure thermal management design accommodates the specified power dissipation limits. Validate package dimensions against PCB footprint requirements.

Selection Notes

Select this component when high current gain and moderate voltage ratings are required. Consider the TO-126 package for through-hole mounting constraints. Evaluate thermal resistance parameters for heat sink requirements. Compare alternative Darlington configurations if higher voltage or different packaging is needed. Verify compatibility with driving circuit capabilities.

Part Context

The BD675A is part of onsemi's BD675A series of NPN Darlington transistors. These devices are designed for general-purpose switching and amplification tasks. The series offers high current gain and robust power handling in standard through-hole packages. They are commonly used in industrial and consumer electronics applications requiring reliable signal amplification or load driving.