BD676

Overview

The BD676 is a PNP epitaxial silicon Darlington transistor manufactured by onsemi. It features a single configuration housed in a TO-126 (TO-225) through-hole package. Key electrical ratings include a maximum collector-emitter voltage of 45 V, a maximum emitter-base voltage of 5 V, and a continuous collector current of 4 A. The device supports a power dissipation of 14 W and operates within a temperature range from -55 °C to +150 °C. It exhibits a minimum DC current gain of 750.

Feature Summary

• High current amplification capability provided by the Darlington configuration.

Applications

• General-purpose switching applications
• Driver circuits for loads requiring high input impedance

Procurement Notes

Verify component authenticity against official datasheets due to End-of-Life status. Confirm RoHS compliance details via manufacturer documentation. Ensure thermal management aligns with specified power dissipation limits during operation.

Selection Notes

Select this component for designs requiring high current gain and robust voltage handling in a through-hole format. Verify that the 4 A current rating and 45 V voltage limits meet circuit requirements. Consider thermal constraints given the 14 W dissipation capacity.

Part Context

This part belongs to the BD676A series of PNP Darlington transistors. It is designed for medium-power applications where high gain and reliable switching are necessary. The TO-126 package facilitates standard PCB mounting techniques.

Replacement Considerations

Check for direct substitutes within the same family or equivalent specifications from other manufacturers. Verify pinout compatibility and thermal characteristics before substitution.