BD676A

Overview

The BD676A is a PNP epitaxial silicon Darlington transistor manufactured by onsemi. It features a monolithic configuration with high current gain and integrated antiparallel collector-emitter diode. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 45 V, maximum emitter-base voltage (VEBO) of 5 V, and continuous collector current of -4 A. Power dissipation is rated at 14 W in a TO-126 through-hole package. The device supports operating temperatures up to +150°C and offers a minimum DC current gain (hFE) of 750.

Feature Summary

• Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
• High linearity current gain characteristics
• Epitaxial silicon construction for robust performance

Applications

• High-current switching applications
• Power amplifier stages
• Motor control circuits

Procurement Notes

Verify component authenticity against official onsemi documentation due to end-of-life status. Confirm RoHS compliance details via manufacturer datasheets. Check for product change notifications affecting pinout or material composition before integration into new designs.

Selection Notes

Select this component for high-gain PNP switching requirements within 45 V limits. Ensure thermal management supports 14 W dissipation in TO-126 packages. Verify compatibility with existing circuit biasing networks given the high hFE specification.

Part Context

Part of the BD676 series complementing NPN counterparts like BD675. Designed for general-purpose power switching where high current drive capability is essential. Manufactured using planar base island technology for improved reliability and performance consistency across temperature ranges.

Replacement Considerations

Consult official cross-reference guides for verified substitutes. Consider BD677A as a complementary NPN option if system design requires matched pairs. Verify pinout compatibility and thermal characteristics when evaluating alternative manufacturers.