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Product Detailed Parameters
- Description：TRANS PNP DARL 45V 4A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP - Darlington
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：2.8V @ 40mA, 2A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A, 3V
- Power - Max：40 W
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
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Overview
The BD676AG is a plastic medium-power silicon PNP Darlington transistor manufactured by onsemi. It features a monolithic construction with high DC current gain and an integrated antiparallel collector-emitter diode. The device operates within a collector-emitter voltage of 45 Vdc, supports a maximum continuous collector current of 4.0 Adc, and handles up to 40 W of power dissipation at 25°C case temperature. It utilizes a TO-225 (TO-126) package with three pins.
Feature Summary
- Monolithic Darlington configuration providing high DC current gain
- Integrated antiparallel collector-emitter diode for protection
- Pb-Free and RoHS Compliant packaging
Applications
- Output devices in complementary general-purpose amplifier applications
Procurement Notes
Verify the specific part number suffix against the manufacturer's official ordering information table. Confirm that the component is suitable for new designs, as some variants in this series are discontinued. Ensure compliance with RoHS standards and verify thermal management requirements for the TO-225 package during integration.
Selection Notes
Select this component for applications requiring a PNP output stage with high current drive capability. The 45 V rating defines the maximum voltage limit. Consider the thermal resistance and safe operating area curves when designing heat sinks. Verify compatibility with complementary NPN transistors from the same series if used in push-pull configurations.
Part Context
This component belongs to the BD676 series of plastic medium-power silicon PNP Darlingtons. It is designed for general-purpose amplifier applications and is complementary to the BD675, BD675A, BD677, BD677A, BD679, BD679A, and BD681 series.
Replacement Considerations
BD676G
FAQ
What is the maximum collector-emitter voltage for the BD676AG?
The maximum collector-emitter voltage (VCEO) for the BD676AG is 45 Vdc.
Is the BD676AG lead-free?
Yes, the device is Pb-Free and RoHS Compliant.
What is the minimum DC current gain specified for this transistor?
The minimum DC current gain (hFE) is 750, tested at IC = 2.0 Adc and VCE = 3.0 Vdc.
