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Product Detailed Parameters
- Description：TRANS PNP DARL 45V 4A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP - Darlington
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：2.8V @ 40mA, 2A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A, 3V
- Power - Max：14 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
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Overview
The BD676AS is a PNP epitaxial silicon Darlington transistor manufactured by onsemi. It features a single configuration housed in a TO-126 through-hole package. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 45 V, an emitter-base voltage (VEBO) of 5 V, and a collector-base voltage (VCBO) of 45 V. The device supports a maximum DC collector current of 4 A with a power dissipation capability of 14 W. It exhibits a minimum DC current gain (hFE) of 750 and a maximum collector cutoff current of 200 uA. The component operates at temperatures up to +150°C.
Feature Summary
- High current gain capability suitable for amplification applications
- Robust power handling with 14 W dissipation rating
- Epitaxial silicon construction for reliable performance
Applications
- General-purpose amplification circuits
- Switching applications requiring high gain
- Driver stages for power loads
Procurement Notes
Verify the End-of-Life status before design finalization, as the manufacturer indicates this component is obsolete and will be discontinued. Confirm RoHS and REACH SVHC compliance details via official documentation. Ensure the TO-126 through-hole package aligns with existing board layouts. Check for available substitute parts if long-term supply is required.
Selection Notes
Select this component when a PNP Darlington transistor with 4 A continuous current capacity is needed. The 45 V voltage rating defines its suitability for low-to-medium voltage systems. Consider the TO-126 package for through-hole assembly requirements. Verify thermal management needs given the 14 W power dissipation limit and +150°C maximum junction temperature.
Part Context
The BD676AS belongs to the BD676A series of PNP Darlington transistors from onsemi. These devices are designed for applications demanding high current gain and moderate power handling. The 'S' suffix typically denotes specific packaging or tape-and-reel variations, though the core electrical characteristics remain consistent with the standard BD676A specification.
Replacement Considerations
Publicly confirmed substitute part numbers are not provided in the available source data. Consult onsemi's official replacement guides or distributor cross-reference lists for verified alternatives.
